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QN3120M6N 数据表(PDF) 4 Page - uPI Group Inc.

部件名 QN3120M6N
功能描述  N-Channel 30V Fast Switching MOSFET
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制造商  UPI [uPI Group Inc.]
网页  http://www.ubiq-semi.com/
标志 UPI - uPI Group Inc.

QN3120M6N 数据表(HTML) 4 Page - uPI Group Inc.

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QN3120M6N
QN3120M6N-DS-F0000, Dec. 2019
Copyright© uPI Semiconductor Corp. All Rights reserved.
www.upi-semi.com
3
 
N-Channel Electrical Characteristics
N-Channel Electrical Characteristics: (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
--
--
V
△
BVDSS /△TJ
BVDSS Temperature Coefficient
Reference to 25°C, ID=1mA
--
0.014
--
V/°C
RDS(ON)
Static Drain-Source
On-Resistance2
VGS=10V, ID=30A
--
2.3
2.9
mΩ
VGS=4.5V, ID=15A
--
3.1
4.1
VGS(th)
Gate Threshold Voltage
VGS=VDS, ID =250uA
1.2
--
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
--
-4.6
--
mV/°C
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V,TJ=25°C
--
--
1
uA
VDS=24V, VGS=0V,TJ=55°C
--
--
5
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0V
--
--
±100
nA
gfs
Forward Transconductance
VDS=5V, ID=15A
--
40
--
S
Rg
Gate Resistance
VDS=0V, VGS=0V, f=1MHz
--
1.0
--
Ω
Qg
Total Gate Charge
VDS=15V, VGS=10V, ID=15A
--
28.1
--
nC
Qg
Total Gate Charge
VDS=15V, VGS=4.5V, ID=15A
--
13.3
--
Qgs
Gate-Source Charge
--
5.2
--
Qgd
Gate-Drain Charge
--
4.0
--
td(on)
Turn-On Delay Time
VDS=15V, VGS=10V, RG=3.3
,
ID=15A
--
10.5
--
ns
tr
Rise Time
--
43.9
--
td(off)
Turn-Off Delay Time
--
23.8
--
tf
Fall Time
--
4.5
--
Ciss
Input Capacitance
VDS=15V, VGS=0V, f=1MHz
--
1814
--
pF
Coss
Output Capacitance
--
630
--
Crss
Reverse Transfer Capacitance
--
42
--


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