STM32G474PBY6XXX datasheet(169/236 Pages) STMICROELECTRONICS

部件名	STM32G474PBY6XXX

功能描述	Arm® Cortex®-M4 32-bit MCUFPU, 170 MHz / 213 DMIPS, 128 KB SRAM, rich analog, math acc, 184 ps 12 chan Hi-res timer

PDF	236 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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169 / 236 page

DS12288 Rev 5

169/236

STM32G474xB STM32G474xC STM32G474xE

Electrical characteristics

200

5.3.24

Temperature sensor characteristics

5.3.25

VBAT monitoring characteristics

Table 81. TS characteristics

Symbol

Parameter

Min

Typ

Max

Unit

TL(1)

1. Guaranteed by design.

VTS linearity with temperature

±1

±2

°C

Avg_Slope(1)

Average slope

2.3

2.5

2.7

mV/°C

V30

Voltage at 30°C (±5 °C)(2)

2. Measured at VDDA = 3.0 V ±10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte. Refer

to Table 5: Temperature sensor calibration values.

0.742

0.76

0.785

tSTART-RUN(1)

Start-up time in Run mode (start-up of buffer)

µs

tSTART_CONT(3)

Continuous mode means RUN mode or Temperature Sensor ON.

Start-up time when entering in continuous

mode

120

µs

tS_temp(1)

ADC sampling time when reading the

temperature

µs

IDD(TS)(1)

Temperature sensor consumption from VDD,

when selected by ADC

-4.7

µA

Table 82. VBAT monitoring characteristics

Symbol

Parameter

Min

Typ

Max

Unit

Resistor bridge for VBAT

-39

kΩ

QRatio on VBAT measurement

Er(1)

1. Guaranteed by design.

Error on Q

-10

tS_vbat(1)

ADC sampling time when reading the

VBAT

µs

Table 83. VBAT charging characteristics

Symbol

Parameter Conditions

Min

Typ

Max

Unit

RBC

Battery

charging

resistor

VBRS = 0

kΩ

VBRS = 1

1.5

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