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STM32G474PBY3XXX 数据表(PDF) 195 Page - STMicroelectronics |
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STM32G474PBY3XXX 数据表(HTML) 195 Page - STMicroelectronics |
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195 / 236 page  DS12288 Rev 5 195/236 STM32G474xB STM32G474xC STM32G474xE Electrical characteristics 200 NAND controller waveforms and timings Figure 48 through Figure 51 represent synchronous waveforms, and Table 106 and Table 107 provide the corresponding timings. The results shown in these tables are obtained with the following FMC configuration: • COM.FMC_SetupTime = 0x01 • COM.FMC_WaitSetupTime = 0x03 • COM.FMC_HoldSetupTime = 0x02 • COM.FMC_HiZSetupTime = 0x01 • ATT.FMC_SetupTime = 0x01 • ATT.FMC_WaitSetupTime = 0x03 • ATT.FMC_HoldSetupTime = 0x02 • ATT.FMC_HiZSetupTime = 0x01 • Bank = FMC_Bank_NAND • MemoryDataWidth = FMC_MemoryDataWidth_16b • ECC = FMC_ECC_Enable • ECCPageSize = FMC_ECCPageSize_512Bytes • TCLRSetupTime = 0 • TARSetupTime = 0 In all timing tables, the THCLK is the HCLK clock period. Table 105. Synchronous non-multiplexed PSRAM write timings(1)(2)(3) 1. CL = 30 pF. 2. Guaranteed by characterization results. 3. Clock ratio R = (HCLK period /FMC_CLK period). Symbol Parameter Min Max Unit tw(CLK) FMC_CLK period R*THCLK - 0.5 - ns td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 1.5 td(CLKH-NExH) FMC_CLK high to FMC_NEx high (x= 0…2) R*THCLK/2 + 1 - td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 2.5 td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 3.5 - td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16…25) - 4 td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16…25) R*THCLK/2 + 1 - td(CLKL-NWEL) FMC_CLK low to FMC_NWE low - 2 td(CLKH-NWEH) FMC_CLK high to FMC_NWE high R*THCLK/2 + 1 - td(CLKL-Data) FMC_D[15:0] valid data after FMC_CLK low - 3 td(CLKL-NBLL) FMC_CLK low to FMC_NBL low 1 - td(CLKH-NBLH) FMC_CLK high to FMC_NBL high R*THCLK/2 + 1.5 - tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 1.5 - th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 4 - |
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