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STM32MP157A 数据表(PDF) 165 Page - STMicroelectronics

部件名 STM32MP157A
功能描述  Arm® dual Cortex®-A7 800 MHz Cortex®-M4 MPU, 3D GPU, TFT/DSI, 37 comm. interfaces, 29 timers, adv. analog
PDF  259 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32MP157A 数据表(HTML) 165 Page - STMicroelectronics

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STM32MP157A/D
Electrical characteristics
237
Static latchup
Two complementary static tests are required on three parts to assess the latchup
performance:
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with JESD78 IC latchup standard.
6.3.16
I/O current injection characteristics
As a general rule, a current injection to the I/O pins, due to external voltage below VSS or
above VDD (for standard, 3.3 V-capable I/O pins) should be avoided during the normal
product operation. However, in order to give an indication of the robustness of the device in
cases when an abnormal injection accidentally happens, susceptibility tests are performed
on a sample basis during the device characterization.
Functional susceptibility to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (higher
than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out
of –5 µA/+0 µA range), or other functional failure (for example reset, oscillator frequency
deviation).
The following tables are the compilation of the SIC1/SIC2 and functional ESD results.
Negative induced A negative induced leakage current is caused by negative injection and
positive induced leakage current by positive injection.
6.3.17
I/O port characteristics
General input/output characteristics
Table 50. Electrical sensitivities
Symbol
Parameter
Conditions
Class
LU
Static latchup class
TA = +25 °C conforming to JESD78
II level A
Table 51. I/O current injection susceptibility(1)
Symbol
Description
Negative
injection
Positive
injection
Unit
IINJ
ANA0, ANA1, DSI_D0_P, DSI_D0_N, DSI_CK_P,
DSI_CK_N, DSI_D1_P, DSI_D1_N, PA4, PA5
00
mA
PG2, PG3, PG4, PH2
0
N/A
All other FTxx I/Os
5
N/A
1. Guaranteed by characterization
.



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