STM32L412RBI6PTR datasheet(131/192 Pages) STMICROELECTRONICS

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DS12469 Rev 8

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STM32L412xx

Electrical characteristics

164

6.3.14

I/O port characteristics

General input/output characteristics

Unless otherwise specified, the parameters given in Table 69 are derived from tests

performed under the conditions summarized in Table 21: General operating conditions. All

I/Os are designed as CMOS- and TTL-compliant.

Table 69. I/O static characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VIL(1)

I/O input low level

voltage

1.62 V<VDDIOx<3.6 V

0.3xVDDIOx (2)

I/O input low level

voltage

1.62 V<VDDIOx<3.6 V

0.39xVDDIOx-0.06 (3)

I/O input low level

voltage

1.08 V<VDDIOx<1.62 V

0.43xVDDIOx-0.1 (3)

VIH(1)

I/O input high level

voltage

1.62 V<VDDIOx<3.6 V

0.7xVDDIOx (2)

I/O input high level

voltage

1.62 V<VDDIOx<3.6 V

0.49xVDDIOX+0.26 (3)

I/O input high level

voltage

1.08 V<VDDIOx<1.62 V 0.61xVDDIOX+0.05 (3)

Vhys(3)

TT_xx, FT_xxx and

NRST I/O input

hysteresis

1.62 V<VDDIOx<3.6 V

200

Ilkg(4)

FT_xx input leakage

current(3)(5)

VIN ≤

Max(VDDXXX)(6)(7)

±100

Max(VDDXXX) ≤ VIN ≤

Max(VDDXXX)+1 V(6)(7)

650

Max(VDDXXX)+1 V <

VIN ≤ 5.5 V(6)(7)

200

FT_u and PC3 I/O

VIN ≤

Max(VDDXXX)(6)(7)

±150

Max(VDDXXX) ≤ VIN ≤

Max(VDDXXX)+1 V(6)(7)

2500(3)

Max(VDDXXX)+1 V <

VIN ≤ 5.5 V(6)(7)

250

TT_xx input leakage

current

VIN ≤ Max(VDDXXX)(6)

±150

Max(VDDXXX) ≤ VIN <

3.6 V(6)

2000(3)

RPU

Weak pull-up

equivalent resistor (8)

VIN = VSS

kΩ

RPD

Weak pull-down

equivalent resistor(8)

VIN = VDDIOx

kΩ

CIO

I/O pin capacitance

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