STM32L412RBI3PTR datasheet(132/192 Pages) STMICROELECTRONICS

132 / 192 page

Electrical characteristics

STM32L412xx

132/192

DS12469 Rev 8

All I/Os are CMOS- and TTL-compliant (no software configuration required). Their

characteristics cover more than the strict CMOS-technology or TTL parameters. The

coverage of these requirements is shown in Figure 28 for standard I/Os, and in Figure 28 for

5 V tolerant I/Os.

Figure 28. I/O input characteristics

Output driving current

The GPIOs (general purpose input/outputs) can sink or source up to ±8 mA, and sink or

source up to ± 20 mA (with a relaxed VOL/VOH).

1. Refer to Figure 28: I/O input characteristics.

2. Tested in production.

3. Guaranteed by design.

4. This value represents the pad leakage of the IO itself. The total product pad leakage is provided by this formula:

ITotal_Ileak_max = 10 µA + [number of IOs where VIN is applied on the pad] ₓ Ilkg(Max).

5. All FT_xx GPIOs except FT_u and PC3 I/O.

6. Max(VDDXXX) is the maximum value of all the I/O supplies. Refer to Table: Legend/Abbreviations used in the pinout table.

7. To sustain a voltage higher than Min(VDD, VDDA, VDDUSB) +0.3 V, the internal Pull-up and Pull-Down resistors must be

disabled.

8. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This

PMOS/NMOS contribution to the series resistance is minimal (~10% order).

MSv37613V1

Teste

d in

production

CMOS

requirement

Vih

min

= 0

.7xV

DDIO

Based

on simulati

on Vi

h min

= 0.

61xV

DDIOx

+0.05

for 1.08<V

DDIOx

<1.62

or 0.49xV

DDIOx

+0.2

6 for

VDDI

Ox>1

.62

Based

on simu

lation

Vil m

ax =0.43xV

DDIOx

-0.1 for

1.08

<VDDIOx

<1.62

or 0.39xV

DDIOx

-0.06

for VDDIO

x>1.62

Tested

in produ

ction CMOS

requirement

Vil ma

x = 0.3xVdd

TTL requirement Vih min = 2V

TTL requirement Vil max = 0.8V

STM32L412RBI3PTR 数据表(PDF) 132 Page - STMicroelectronics

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