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STM32L412R8U3XXX 数据表(PDF) 149 Page - STMicroelectronics |
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STM32L412R8U3XXX 数据表(HTML) 149 Page - STMicroelectronics |
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149 / 192 page ![]() DS12469 Rev 8 149/192 STM32L412xx Electrical characteristics 164 Figure 31. ADC accuracy characteristics THD Total harmonic distortion ADC clock frequency ≤ 26 MHz, 1.65 V ≤ VDDA = VREF+ ≤ 3.6 V, Voltage scaling Range 2 Single ended Fast channel (max speed) - -71 -69 dB Slow channel (max speed) - -71 -69 Differential Fast channel (max speed) - -73 -72 Slow channel (max speed) - -73 -72 1. Guaranteed by design. 2. ADC DC accuracy values are measured after internal calibration. 3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to analog pins which may potentially inject negative current. 4. The I/O analog switch voltage booster is enable when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when VDDA < 2.4 V). It is disable when VDDA ≥ 2.4 V. No oversampling. Table 80. ADC accuracy - limited test conditions 4(1)(2)(3) (continued) Sym- bol Parameter Conditions(4) Min Typ Max Unit ET = total unajusted error: maximum deviation between the actual and ideal transfer curves. EO = offset error: maximum deviation between the first actual transition and the first ideal one. EG = gain error: deviation between the last ideal transition and the last actual one. ED = differential linearity error: maximum deviation between actual steps and the ideal ones. EL = integral linearity error: maximum deviation between any actual transition and the end point correlation line. (1) Example of an actual transfer curve (2) The ideal transfer curve (3) End point correlation line 4095 4094 4093 7 6 5 4 3 2 1 0 23 4 5 6 1 7 4093 4094 4095 4096 VDDA VSSA EO ET EL EG ED 1 LSB IDEAL (1) (3) (2) MS19880V2 |
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