STM32L412R8T3PXXX datasheet(119/192 Pages) STMICROELECTRONICS

部件名	STM32L412R8T3PXXX

功能描述	Ultra-low-power Arm® Cortex®-M4 32-bit MCUFPU, 100DMIPS, up to 128KB Flash, 40KB SRAM, analog, ext. SMPS

PDF	192 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

119 / 192 page

DS12469 Rev 8

119/192

STM32L412xx

Electrical characteristics

164

6.3.8

Internal clock source characteristics

The parameters given in Table 57 are derived from tests performed under ambient

temperature and supply voltage conditions summarized in Table 21: General operating

conditions. The provided curves are characterization results, not tested in production.

High-speed internal (HSI16) RC oscillator

Table 57. HSI16 oscillator characteristics(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI16

HSI16 Frequency

VDD=3.0 V, TA=30 °C

15.88

16.08

MHz

TRIM

HSI16 user trimming step

Trimming code is not a

multiple of 64

0.2

0.3

0.4

Trimming code is a

multiple of 64

-4

-6

-8

DuCy(HSI16)(2) Duty Cycle

∆Temp(HSI16)

HSI16 oscillator frequency

drift over temperature

TA= 0 to 85 °C

-1

TA= -40 to 125 °C

-2

1.5

∆VDD(HSI16)

HSI16 oscillator frequency

drift over VDD

VDD=1.62 V to 3.6 V

-0.1

0.05

tsu(HSI16)(2)

HSI16 oscillator start-up

time

0.8

1.2

μs

tstab(HSI16)(2)

HSI16 oscillator

stabilization time

μs

IDD(HSI16)(2)

HSI16 oscillator power

consumption

155

190

μA

1. Guaranteed by characterization results.

2. Guaranteed by design.

STM32L412R8T3PXXX 数据表(PDF) 119 Page - STMicroelectronics

STM32L412R8T3PXXX 数据表(HTML) 119 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

数据表下载