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STM32L412R8I3PXXX 数据表(PDF) 129 Page - STMicroelectronics

部件名 STM32L412R8I3PXXX
功能描述  Ultra-low-power Arm® Cortex®-M4 32-bit MCUFPU, 100DMIPS, up to 128KB Flash, 40KB SRAM, analog, ext. SMPS
PDF  192 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32L412R8I3PXXX 数据表(HTML) 129 Page - STMicroelectronics

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DS12469 Rev 8
129/192
STM32L412xx
Electrical characteristics
164
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
6.3.12
Electrical sensitivity characteristics
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the ANSI/JEDEC standard.
Table 65. EMI characteristics
Symbol
Parameter
Conditions
Monitored
frequency band
Max vs.
[fHSE/fHCLK]
Unit
8 MHz/ 80 MHz
SEMI
Peak level
VDD = 3.6 V, TA = 25 °C,
LQFP64 package
compliant with IEC
61967-2
0.1 MHz to 30 MHz
3
dBµV
30 MHz to 130 MHz
3
130 MHz to 1 GHz
4
1 GHz to 2 GHz
8
EMI Level
2.5
-
Table 66. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Package
Class
Maximum
value(1)
Unit
VESD(HBM)
Electrostatic discharge voltage
(human body model)
TA = +25 °C, conforming
to ANSI/ESDA/JEDEC
JS-001
All
2
2000
V
VESD
Electrostatic discharge voltage
(charge device model)
TA = +25 °C,
conforming to
ANSI/ESDA/JEDEC-002
BGA64
C2a
500
All others
C1
250
1. Guaranteed by characterization results.



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