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STM32L412R8Y3PXXX 数据表(PDF) 107 Page - STMicroelectronics |
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STM32L412R8Y3PXXX 数据表(HTML) 107 Page - STMicroelectronics |
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107 / 192 page  3. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 50: Low-power mode wakeup timings. Table 48. Current consumption in VBAT mode Symbol Parameter Conditions TYP MAX(1) Unit -VBAT 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C IDD_VBAT (VBAT) Backup domain supply current RTC disabled 1.8 V 2 12 66 195 540 - - - - - nA 2.4 V 3 14 73 215 600 - - - - - 3 V 5 16 92 265 730 - - - - - 3.6 V 6 30 161 460 1250 - - - - - RTC enabled and clocked by LSE quartz(2) 1.8 V 300 455 460 990 1750 - - - - - 2.4 V 380 515 575 1050 1950 - - - - - 3 V 445 550 595 1200 2550 - - - - - 3.6 V 495 630 820 1500 2950 - - - - - 1. Guaranteed by characterization results, unless otherwise specified. 2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors. |
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