Production Process

TQHiP

Power MESFET Foundry Service

Features

•

Power MESFET Process

•

Interconnects:

•

2 Global (one airbridge)

•

1 Local

•

High-Q Passives

•

Bulk & Thin Film Resistors

•

Backside Vias Optional

•

High Volume Production

Processes

•

Validated Models and

Design Support

Applications

•

Power Amplifiers

•

Switches

•

Frequencies thru X-Band

•

Base Station Driver

Amplifiers

•

CATV Line Amplifiers

•

Cellular Power Amps, Driv-

ers, Switches

General Description

TriQuint’s TQHiP process is our robust, high power density

MESFET process.

It provides a straight-forward, low cost

process for a variety of circuits and applications. Its high oper-

ating and breakdown voltages make it ideal for wireless or

wired infrastructure applications. A thick (4 µm) gold airbridge

complements the 2 µm thick gold global metal and 0.5 µm

thick gold surface layer for wiring flexibility and interconnect

density. Precision NiCr resistors and high value MIM capaci-

tors are included.

Semiconductors for Communications

www.triquint.com

TriQuint Semiconductor

2300 NE Brookwood Pkwy

Hillsboro, Oregon 97124

Phone: 503-615-9000

Fax: 503-615-8905

Email: info@triquint.com

Page 1 of 4; Rev 2.1 4/30/02

Isolation Implant

NiCr

N-/P- Channel

N+

N+

Metal 0

Metal 1 – 2 um

Metal 1

Air Bridge - 4um

MIM Metal

D MESFET

NiCr Resistor

MIM Capacitor

Semi-Insulating GaAs Substrate

Isolation Implant

NiCr

N-/P- Channel

N+

N+

Metal 0

Metal 1 – 2 um

Metal 1

Air Bridge - 4um

Isolation Implant

NiCr

N-/P- Channel

N+

N+

Metal 0

Metal 1 – 2 um

Metal 1

Isolation Implant

NiCr

NiCr

N-/P- Channel

N+

N+

N-/P- Channel

N+

N+

Metal 0

Metal 1 – 2 um

Metal 1

Metal 1 – 2 um

Metal 1

Metal 1 – 2 um

Metal 1

Air Bridge - 4um

MIM Metal

D MESFET

NiCr Resistor

MIM Capacitor

Semi-Insulating GaAs Substrate

TQHiP Process Cross-Section