B320AF/B330AF

Document number: DS39623 Rev. 2 - 2

2 of 5

www.diodes.com

May 2017

© Diodes Incorporated

B320AF/B330AF

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

B320AF

B330AF

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VRM

20

30

V

Average Rectified Output Current

IO

3

A

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

IFSM

80

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Typical Thermal Resistance Junction to Ambient (Note 5)

RθJA

85

°C/W

Typical Thermal Resistance Junction to Case (Note 5)

RθJC

45

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Forward Voltage Drop

VF

—

—

0.46

0.40

0.50

—

V

IF = 3A, TJ = +25°C

IF = 3A, TJ = +125°C

B320AF

Leakage Current (Note 6)

B330AF

IR

—

—

—

—

0.02

12

0.03

14.0

0.20

—

0.20

—

mA

VR = 20V, TJ = +25°C

VR = 20V, TJ = +125°C

VR = 30V, TJ = +25°C

VR = 30V, TJ = +125°C

Typical Capacitance

CT

—

140

—

pF

VR = 4.0V, f = 1MHz

Notes:

5. Device mounted on FR-4 substrate, 0.4"*0.5", 2oz, single-sided, PC boards with 0.2"*0.25" copper pad.

6. Short duration pulse test used to minimize self-heating effect.