ST10F272E datasheet(136/181 Pages) STMICROELECTRONICS

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Electrical characteristics

ST10F272B/ST10F272E

136/181

24.6

Flash characteristics

VDD = 5 V

± 10%, V

SS = 0 V

Table 64.

Flash characteristics

Parameter

Typical

Maximum

Unit

Notes

TA = 25°C

TA = 125°C

0 cycles(1)

100k cycles

Word Program (32-bit) (2)

290

µs–

Double Word Program (64-bit)(2))

150

570

µs–

Bank 0 Program (256K)

(Double Word Program)

1.6

2.0

3.9

–

Sector Erase (8K)

0.6

0.5

0.9

0.8

1.0

0.9

not preprogrammed

preprogrammed

Sector Erase (32K)

1.1

0.8

2.0

1.8

2.7

2.5

not preprogrammed

preprogrammed

Sector Erase (64K)

1.7

1.3

3.7

3.3

5.1

4.7

not preprogrammed

preprogrammed

Bank 0 Erase (256K) (3)

5.6

4.0

13.6

11.9

19.2

17.5

not preprogrammed

preprogrammed

Recovery from Power-Down (tPD)

–

µs

(4)

Program Suspend Latency (4)

–10

µs

Erase Suspend Latency (4)

–30

µs

Erase Suspend Request Rate (4)

Min delay between 2

requests

Set Protection (4)

300

µs

The figures are given after about 100 cycles due to testing routines (0 cycles at the final customer).

Word and Double Word Programming times are provided as average values derived from a full sector programming time:

absolute value of a Word or Double Word Programming time could be longer than the average value.

Bank Erase is obtained through a multiple Sector Erase operation (setting bits related to all sectors of the Bank). As

ST10F272 implements only one bank, the Bank Erase operation is equivalent to Module and Chip Erase operations.

Not 100% tested, guaranteed by Design Characterization.

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