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STM32F412RGU6PTR 数据表(PDF) 126 Page - STMicroelectronics |
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STM32F412RGU6PTR 数据表(HTML) 126 Page - STMicroelectronics |
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126 / 201 page ![]() Electrical characteristics STM32F412xE/G 126/201 DocID028087 Rev 7 Unless otherwise specified, the parameters given in Table 59 are derived from tests performed under the ambient temperature and VDD supply voltage conditions summarized in Table 16. Table 59. I/O AC characteristics(1)(2) OSPEEDRy [1:0] bit value(1) Symbol Parameter Conditions Min Typ Max Unit 00 fmax(IO)out Maximum frequency(3) CL = 50 pF, VDD ≥ 2.70 V - - 4 MHz CL = 50 pF, VDD≥ 1.7 V - - 2 CL = 10 pF, VDD ≥ 2.70 V - - 8 CL = 10 pF, VDD ≥ 1.7 V - - 4 tf(IO)out/ tr(IO)out Output high to low level fall time and output low to high level rise time CL = 50 pF, VDD = 1.7 V to 3.6 V -- 100 ns 01 fmax(IO)out Maximum frequency(3) CL = 50 pF, VDD ≥ 2.70 V - - 25 MHz CL = 50 pF, VDD ≥ 1.7 V - - 12.5 CL = 10 pF, VDD ≥ 2.70 V - - 50 CL = 10 pF, VDD ≥ 1.7 V - - 20 tf(IO)out/ tr(IO)out Output high to low level fall time and output low to high level rise time CL = 50 pF, VDD ≥2.7 V - - 10 ns CL = 50 pF, VDD ≥ 1.7 V - - 20 CL = 10 pF, VDD ≥ 2.70 V - - 6 CL = 10 pF, VDD ≥ 1.7 V - - 10 10 fmax(IO)out Maximum frequency(3) CL = 40 pF, VDD ≥ 2.70 V - - 50(4) MHz CL = 40 pF, VDD ≥ 1.7 V - - 25 CL = 10 pF, VDD ≥ 2.70 V - - 100(4) CL = 10 pF, VDD ≥ 1.7 V - - 50(4) tf(IO)out/ tr(IO)out Output high to low level fall time and output low to high level rise time CL = 40 pF, VDD≥ 2.70 V - - 6 ns CL = 40 pF, VDD≥ 1.7 V - - 10 CL = 10 pF, VDD≥ 2.70 V - - 4 CL = 10 pF, VDD≥ 1.7 V - - 6 11 Fmax(IO)out Maximum frequency(3) CL = 30 pF, VDD ≥ 2.70 V - - 100(4) MHz CL = 30 pF, VDD ≥ 1.7 V - - 50(4) tf(IO)out/ tr(IO)out Output high to low level fall time and output low to high level rise time CL = 30 pF, VDD ≥ 2.70 V - - 4 ns CL = 30 pF, VDD ≥ 1.7 V - - 6 CL = 10 pF, VDD≥ 2.70 V - - 2.5 CL = 10 pF, VDD≥ 1.7 V - - 4 -tEXTIpw Pulse width of external signals detected by the EXTI controller -10 - - ns |
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