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STM32F412RGY7PTR 数据表(PDF) 122 Page - STMicroelectronics |
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STM32F412RGY7PTR 数据表(HTML) 122 Page - STMicroelectronics |
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122 / 201 page ![]() Electrical characteristics STM32F412xE/G 122/201 DocID028087 Rev 7 6.3.15 I/O current injection characteristics As a general rule, current injection to the I/O pins, due to external voltage below VSS or above VDD (for standard, 3 V-capable I/O pins) should be avoided during normal product operation. However, in order to give an indication of the robustness of the microcontroller in cases when abnormal injection accidentally happens, susceptibility tests are performed on a sample basis during device characterization. Functional susceptibility to I/O current injection While a simple application is executed on the device, the device is stressed by injecting current into the I/O pins programmed in floating input mode. While current is injected into the I/O pin, one at a time, the device is checked for functional failures. The failure is indicated by an out of range parameter: ADC error above a certain limit (>5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out of –5 µA/+0 µA range), or other functional failure (for example reset, oscillator frequency deviation). Negative induced leakage current is caused by negative injection and positive induced leakage current by positive injection. The test results are given in Table 56. Note: It is recommended to add a Schottky diode (pin to ground) to analog pins which may potentially inject negative currents. Table 56. I/O current injection susceptibility(1) 1. NA = not applicable . Symbol Description Functional susceptibility Unit Negative injection Positive injection IINJ Injected current on BOOT0 pin –0 NA mA Injected current on NRST pin –0 NA Injected current on PB3, PB4, PB5, PB6, PB7, PB8, PB9, PC13, PC14, PC15, PH1, PDR_ON, PC0, PC1,PC2, PC3, PD1, PD5, PD6, PD7, PE0, PE2, PE3, PE4, PE5, PE6 –0 NA Injected current on any other FT pin –5 NA Injected current on any other pins –5 +5 |
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