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STM32F412RGT3PTR 数据表(PDF) 120 Page - STMicroelectronics |
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STM32F412RGT3PTR 数据表(HTML) 120 Page - STMicroelectronics |
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120 / 201 page  Electrical characteristics STM32F412xE/G 120/201 DocID028087 Rev 7 Prequalification trials Most of the common failures (unexpected reset and program counter corruption) can be reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1 second. To complete these trials, ESD stress can be applied directly on the device, over the range of specification values. When unexpected behavior is detected, the software can be hardened to prevent unrecoverable errors occurring (see application note AN1015). Electromagnetic Interference (EMI) The electromagnetic field emitted by the device are monitored while a simple application, executing EEMBC code, is running. This emission test is compliant with IEC61967-2 standard which specifies the test board and the pin loading. Table 53. EMI characteristics for LQFP144 Symbol Parameter Conditions Monitored frequency band Max vs. [fHSE/fCPU] Unit 8/100 MHz SEMI Peak level VDD = 3.6 V, TA = 25 °C, LQFP144 package, conforming to IEC 61967-2, EEMBC, ART ON, all peripheral clocks enabled, clock dithering disabled. 0.1 to 30 MHz 20 dBµV 30 to 130 MHz 28 130 MHz to 1 GHz 21 EMI Level 3.5 - |
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