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STM32F412RGT7TR 数据表(PDF) 118 Page - STMicroelectronics |
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STM32F412RGT7TR 数据表(HTML) 118 Page - STMicroelectronics |
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118 / 201 page  Electrical characteristics STM32F412xE/G 118/201 DocID028087 Rev 7 Table 51. Flash memory endurance and data retention Vprog Programming voltage 32-bit program operation 2.7 - 3.6 V 16-bit program operation 2.1 - 3.6 V 8-bit program operation 1.7 - 3.6 V 1. Guaranteed by characterization, not tested in production. 2. The maximum programming time is measured after 100K erase operations. Table 50. Flash memory programming with VPP voltage Symbol Parameter Conditions Min(1) Typ Max(1) 1. Guaranteed by design, not tested in production. Unit tprog Double word programming TA = 0 to +40 °C VDD = 3.3 V VPP = 8.5 V - 16 100(2) 2. The maximum programming time is measured after 100K erase operations. µs tERASE16KB Sector (16 KB) erase time - 230 - ms tERASE64KB Sector (64 KB) erase time - 490 - tERASE128KB Sector (128 KB) erase time - 875 - tME Mass erase time - 6.9 - s Vprog Programming voltage - 2.7 - 3.6 V VPP VPP voltage range - 7 - 9 V IPP Minimum current sunk on the VPP pin -10 - - mA tVPP(3) 3. VPP should only be connected during programming/erasing. Cumulative time during which VPP is applied - - - 1 hour Symbol Parameter Conditions Value Unit Min(1) 1. Guaranteed by characterization, not tested in production. NEND Endurance TA = -40 to +85 °C (temp. range 6) TA = -40 to +105 °C (temp. range 7) TA = -40 to +125 °C (temp. range 3) 10 kcycles tRET Data retention 1 kcycle(2) at TA = 85 °C 2. Cycling performed over the whole temperature range. 30 Years 1 kcycle(2) at TA = 105 °C 10 1 kcycle(2) at TA = 125 °C 3 10 kcycle(2) at TA = 55 °C 20 Table 49. Flash memory programming (continued) Symbol Parameter Conditions Min(1) Typ Max(1) Unit |
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