STM32F412RGT7TR datasheet(126/201 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F412xE/G

126/201

DocID028087 Rev 7

Unless otherwise specified, the parameters given in Table 59 are derived from tests

performed under the ambient temperature and VDD supply voltage conditions summarized

in Table 16.

Table 59. I/O AC characteristics(1)(2)

OSPEEDRy

[1:0] bit

value(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fmax(IO)out Maximum frequency(3)

CL = 50 pF, VDD ≥ 2.70 V

MHz

CL = 50 pF, VDD≥ 1.7 V

CL = 10 pF, VDD ≥ 2.70 V

CL = 10 pF, VDD ≥ 1.7 V

tf(IO)out/

tr(IO)out

Output high to low level fall

time and output low to high

level rise time

CL = 50 pF, VDD = 1.7 V to

3.6 V

100

fmax(IO)out Maximum frequency(3)

CL = 50 pF, VDD ≥ 2.70 V

MHz

CL = 50 pF, VDD ≥ 1.7 V

12.5

CL = 10 pF, VDD ≥ 2.70 V

CL = 10 pF, VDD ≥ 1.7 V

tf(IO)out/

tr(IO)out

Output high to low level fall

time and output low to high

level rise time

CL = 50 pF, VDD ≥2.7 V

CL = 50 pF, VDD ≥ 1.7 V

CL = 10 pF, VDD ≥ 2.70 V

CL = 10 pF, VDD ≥ 1.7 V

fmax(IO)out Maximum frequency(3)

CL = 40 pF, VDD ≥ 2.70 V

50(4)

MHz

CL = 40 pF, VDD ≥ 1.7 V

CL = 10 pF, VDD ≥ 2.70 V

100(4)

CL = 10 pF, VDD ≥ 1.7 V

50(4)

tf(IO)out/

tr(IO)out

Output high to low level fall

time and output low to high

level rise time

CL = 40 pF, VDD≥ 2.70 V

CL = 40 pF, VDD≥ 1.7 V

CL = 10 pF, VDD≥ 2.70 V

CL = 10 pF, VDD≥ 1.7 V

Fmax(IO)out Maximum frequency(3)

CL = 30 pF, VDD ≥ 2.70 V

100(4)

MHz

CL = 30 pF, VDD ≥ 1.7 V

50(4)

tf(IO)out/

tr(IO)out

Output high to low level fall

time and output low to high

level rise time

CL = 30 pF, VDD ≥ 2.70 V

CL = 30 pF, VDD ≥ 1.7 V

CL = 10 pF, VDD≥ 2.70 V

2.5

CL = 10 pF, VDD≥ 1.7 V

-tEXTIpw

Pulse width of external signals

detected by the EXTI

controller

-10

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