STM32F412RGT3TR datasheet(152/201 Pages) STMICROELECTRONICS

152 / 201 page

Electrical characteristics

STM32F412xE/G

152/201

DocID028087 Rev 7

Table 84. Asynchronous non-multiplexed SRAM/PSRAM/NOR -

read timings(1)(2)

1. CL = 30 pF.

2. Based on characterization, not tested in production.

Symbol

Parameter

Min

Max

Unit

tw(NE)

FSMC_NE low time

2THCLK – 1

2 THCLK + 0.5

tv(NOE_NE)

FSMC_NEx low to FSMC_NOE low

tw(NOE)

FSMC_NOE low time

2THCLK - 1.5

2THCLK

th(NE_NOE)

FSMC_NOE high to FSMC_NE high hold

time

tv(A_NE)

FSMC_NEx low to FSMC_A valid

1.5

th(A_NOE)

Address hold time after FSMC_NOE high

tv(BL_NE)

FSMC_NEx low to FSMC_BL valid

0.5

th(BL_NOE)

FSMC_BL hold time after FSMC_NOE high

tsu(Data_NE)

Data to FSMC_NEx high setup time

THCLK - 1

tsu(Data_NOE)

Data to FSMC_NOEx high setup time

THCLK - 1

th(Data_NOE)

Data hold time after FSMC_NOE high

th(Data_NE)

Data hold time after FSMC_NEx high

tv(NADV_NE)

FSMC_NEx low to FSMC_NADV low

tw(NADV)

FSMC_NADV low time

THCLK + 0.5

Table 85. Asynchronous non-multiplexed SRAM/PSRAM/NOR read -

NWAIT timings(1)(2)

1. CL = 30 pF.

2. Based on characterization, not tested in production.

Symbol

Parameter

Min

Max

Unit

tw(NE)

FSMC_NE low time

7THCLK - 1 7THCLK + 0.5

tw(NOE)

FSMC_NWE low time

5THCLK – 1.5

5THCLK

tw(NWAIT)

FSMC_NWAIT low time

THCLK – 0.5

tsu(NWAIT_NE)

FSMC_NWAIT valid before FSMC_NEx

high

5THCLK -1

th(NE_NWAIT)

FSMC_NEx hold time after FSMC_NWAIT

invalid

4THCLK + 1

STM32F412RGT3TR 数据表(PDF) 152 Page - STMicroelectronics

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