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STM32F412RGT3P 数据表(PDF) 142 Page - STMicroelectronics |
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STM32F412RGT3P 数据表(HTML) 142 Page - STMicroelectronics |
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142 / 201 page ![]() Electrical characteristics STM32F412xE/G 142/201 DocID028087 Rev 7 Equation 1: RAIN max formula The formula above (Equation 1) is used to determine the maximum external impedance allowed for an error below 1/4 of LSB. N = 12 (from 12-bit resolution) and k is the number of sampling periods defined in the ADC_SMPR1 register. fS(2) Sampling rate (fADC = 30 MHz, and tS = 3 ADC cycles) 12-bit resolution Single ADC - - 2 Msps 12-bit resolution Interleave Dual ADC mode - - 3.75 Msps 12-bit resolution Interleave Triple ADC mode - - 6 Msps IVREF+(2) ADC VREF DC current consumption in conversion mode - - 300 500 µA IVDDA(2) ADC VDDA DC current consumption in conversion mode -- 1.6 1.8 mA 1. VDDA minimum value of 1.7 V is possible with the use of an external power supply supervisor (refer to Section 3.18.2: Internal reset OFF). 2. Guaranteed by characterization, not tested in production. 3. VREF+ is internally connected to VDDA and VREF- is internally connected to VSSA. 4. RADC maximum value is given for VDD=1.7 V, and minimum value for VDD=3.3 V. 5. For external triggers, a delay of 1/fPCLK2 must be added to the latency specified in Table 72. Table 72. ADC characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit Table 73. ADC accuracy at fADC = 18 MHz(1) 1. Better performance could be achieved in restricted VDD, frequency and temperature ranges. Symbol Parameter Test conditions Typ Max(2) 2. Guaranteed by characterization, not tested in production. Unit ET Total unadjusted error fADC =18 MHz VDDA = 1.7 to 3.6 V VREF = 1.7 to 3.6 V VDDA −VREF < 1.2 V ±3 ±4 LSB EO Offset error ±2 ±3 EG Gain error ±1 ±3 ED Differential linearity error ±1 ±2 EL Integral linearity error ±2 ±3 RAIN k0.5 – () fADC CADC 2 N 2 + () ln × × ---------------------------------------------------------------- RADC – = |
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