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STM32F412RGH3 数据表(PDF) 144 Page - STMicroelectronics |
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STM32F412RGH3 数据表(HTML) 144 Page - STMicroelectronics |
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144 / 201 page ![]() Electrical characteristics STM32F412xE/G 144/201 DocID028087 Rev 7 Note: ADC accuracy vs. negative injection current: injecting a negative current on any analog input pins should be avoided as this significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to analog pins which may potentially inject negative currents. Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 6.3.16 does not affect the ADC accuracy. Figure 46. ADC accuracy characteristics 1. See also Table 74. 2. Example of an actual transfer curve. 3. Ideal transfer curve. 4. End point correlation line. 5. ET = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves. EO = Offset Error: deviation between the first actual transition and the first ideal one. EG = Gain Error: deviation between the last ideal transition and the last actual one. ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one. EL = Integral Linearity Error: maximum deviation between any actual transition and the end point correlation line. |
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