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STM32F412RGT3 数据表(PDF) 111 Page - STMicroelectronics |
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STM32F412RGT3 数据表(HTML) 111 Page - STMicroelectronics |
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111 / 201 page ![]() DocID028087 Rev 7 111/201 STM32F412xE/G Electrical characteristics 166 Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from the ST website www.st.com. For information about the LSE high-power mode, refer to the reference manual RM0383. Figure 30. Typical application with a 32.768 kHz crystal 6.3.9 Internal clock source characteristics The parameters given in Table 43 and Table 44 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 16. High-speed internal (HSI) RC oscillator L 2. This parameter depends on the crystal used in the application. Refer to the application note AN2867. 3. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is reached. This value is guaranteed by characterization and not tested in production. It is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer. Table 43. HSI oscillator characteristics (1) Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHSI Accuracy of the HSI oscillator HSI user trimming step(2) -- 1 % Factory-calibrated TA = -40 to 125 °C(3) -8 - 5.5 % TA = -40 to 105 °C(3) -8 - 4.5 % TA = -10 to 85 °C(3) -4 - 4 % TA = 25 °C(4) -1 - 1 % tsu(HSI)(2) HSI oscillator startup time - - 2.2 4 µs IDD(HSI)(2) HSI oscillator power consumption - - 60 80 µA 1. VDD = 3.3 V, TA = -40 to 125 °C unless otherwise specified. 2. Guaranteed by design, not tested in production 3. Based on characterization, not tested in production 4. Factory calibrated, parts not soldered. |
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