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STM32F412RGU3 数据表(PDF) 106 Page - STMicroelectronics |
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STM32F412RGU3 数据表(HTML) 106 Page - STMicroelectronics |
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106 / 201 page ![]() Electrical characteristics STM32F412xE/G 106/201 DocID028087 Rev 7 Table 38. Low-power mode wakeup timings(1) Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit tWUSLEEP Wakeup from Sleep mode -- 4 6 clk cycles tWUSLEEPFDSM Flash memory in Deep power down mode - - 50.0 µs tWUSTOP Wakeup from STOP mode Code execution on Flash Main regulator - 12.9 15.0 µs Main regulator, Flash memory in Deep power down mode - 104.9 120.0 Wakeup from Stop mode, regulator in low power mode(2) - 20.8 28.0 Regulator in low power mode, Flash memory in Deep power down mode(2) - 112.9 130.0 tWUSTOP Wakeup from STOP mode code execution on RAM(3) Main regulator with Flash in Stop mode or Deep power down -4.9 7.0 Wakeup from Stop mode, regulator in low power mode and Flash in Stop mode or Deep power down(2) - 12.8 20.0 tWUSTDBY Wakeup from Standby mode - - 316.8 400.0 tWUFLASH Wakeup of Flash From Flash_Stop mode - 11.0 From Flash Deep power down mode - 50.0 1. Guaranteed by characterization, not tested in production. 2. The specification is valid for wakeup from regulator in low power mode or low power low voltage mode, since the timing difference is negligible. 3. For the faster wakeup time for code execution on RAM, the Flash must be in STOP or DeepPower Down mode (see reference manual RM0402). |
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