STM32F412RGY3 datasheet(124/201 Pages) STMICROELECTRONICS

部件名	STM32F412RGY3

功能描述	Arm®-Cortex®-M4 32b MCUFPU, 125 DMIPS, 1MB Flash, 256KB RAM, USB OTG FS, 17 TIMs, 1 ADC, 17 comm. interfaces

PDF	201 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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124 / 201 page

Electrical characteristics

STM32F412xE/G

124/201

DocID028087 Rev 7

All I/Os are CMOS and TTL compliant (no software configuration required). Their

characteristics cover more than the strict CMOS-technology or TTL parameters. The

coverage of these requirements for FT and TC I/Os is shown in Figure 35.

Figure 35. FT/TC I/O input characteristics

3. With a minimum of 200 mV.

4. Leakage could be higher than the maximum value, if negative current is injected on adjacent pins, Refer to Table 56: I/O

current injection susceptibility

5. To sustain a voltage higher than VDD +0.3 V, the internal pull-up/pull-down resistors must be disabled. Leakage could be

higher than the maximum value, if negative current is injected on adjacent pins.Refer to Table 56: I/O current injection

susceptibility

6. Pull-up resistors are designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series

resistance is minimum (~10% order).

7. Pull-down resistors are designed with a true resistance in series with a switchable NMOS. This NMOS contribution to the

series resistance is minimum (~10% order).

Hysteresis voltage between Schmitt trigger switching levels. Guaranteed by characterization, not tested in production.

STM32F412RGY3 数据表(PDF) 124 Page - STMicroelectronics