STM32F429NET6XXX datasheet(132/231 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F427xx STM32F429xx

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DocID024030 Rev 6

Functional susceptibilty to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting

current into the I/O pins programmed in floating input mode. While current is injected into

the I/O pin, one at a time, the device is checked for functional failures.

The failure is indicated by an out of range parameter: ADC error above a certain limit (>5

LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out of –

5 µA/+0 µA range), or other functional failure (for example reset, oscillator frequency

deviation).

Negative induced leakage current is caused by negative injection and positive induced

leakage current by positive injection.

The test results are given in Table 55.

Note:

It is recommended to add a Schottky diode (pin to ground) to analog pins which may

potentially inject negative currents.

6.3.17

I/O port characteristics

General input/output characteristics

Unless otherwise specified, the parameters given in Table 56: I/O static characteristics are

derived from tests performed under the conditions summarized in Table 17. All I/Os are

CMOS and TTL compliant.

Table 55. I/O current injection susceptibility(1)

Symbol

Description

Functional susceptibility

Unit

Negative

injection

Positive

injection

IINJ

Injected current on BOOT0 pin

− 0NA

Injected current on NRST pin

− 0NA

Injected current on PA0, PA1, PA2, PA3, PA6, PA7, PB0,

PC0, PC1, PC2, PC3, PC4, PC5, PH1, PH2, PH3, PH4, PH5

− 0NA

Injected current on TTa pins: PA4 and PA5

− 0+5

Injected current on any other FT pin

− 5NA

1. NA = not applicable

Table 56. I/O static characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VIL

FT, TTa and NRST I/O input

low level voltage

1.7 V≤ VDD≤ 3.6 V

0.35VDD − 0.04

(1)

0.3VDD(2)

BOOT0 I/O input low level

voltage

1.75 V≤ VDD ≤ 3.6 V,

–40 °C≤ TA ≤ 105 °C

0.1VDD+0.1(1)

1.7 V≤ VDD ≤ 3.6 V,

0°C≤ TA ≤ 105 °C

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