STM32F429NET7XXX datasheet(129/231 Pages) STMICROELECTRONICS

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STM32F427xx STM32F429xx

Electrical characteristics

192

Table 50. Flash memory endurance and data retention

6.3.14

EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports).

the device is stressed by two electromagnetic events until a failure occurs. The failure is

indicated by the LEDs:

•

Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until

a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.

•

FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS

through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant

with the IEC 61000-4-4 standard.

A device reset allows normal operations to be resumed.

The test results are given in Table 51. They are based on the EMS levels and classes

defined in application note AN1709.

When the application is exposed to a noisy environment, it is recommended to avoid pin

exposition to disturbances. The pins showing a middle range robustness are: PA0, PA1,

PA2, PH2, PH3, PH4, PH5, PA3, PA4, PA5, PA6, PA7, PC4, and PC5.

As a consequence, it is recommended to add a serial resistor (1 k

Ώ) located as close as

possible to the MCU to the pins exposed to noise (connected to tracks longer than 50 mm

on PCB).

Symbol

Parameter

Conditions

Value

Unit

Min(1)

1. Guaranteed by characterization results.

NEND

Endurance

TA = –40 to +85 °C (6 suffix versions)

TA = –40 to +105 °C (7 suffix versions)

kcycles

tRET

Data retention

1 kcycle(2) at TA = 85 °C

2. Cycling performed over the whole temperature range.

Years

1 kcycle(2) at TA = 105 °C

10 kcycles(2) at TA = 55 °C

Table 51. EMS characteristics

Symbol

Parameter

Conditions

Level/

Class

VFESD

Voltage limits to be applied on any I/O pin to

induce a functional disturbance

VDD = 3.3 V, LQFP176, TA = +25 °C,

fHCLK = 168 MHz, conforms to

IEC 61000-4-2

VEFTB

Fast transient voltage burst limits to be

applied through 100 pF on VDD and VSS

pins to induce a functional disturbance

VDD = 3.3 V, LQFP176, TA =+25 °C,

fHCLK = 168 MHz, conforms to

IEC 61000-4-2

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