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STM32F429NET7 数据表(PDF) 104 Page - STMicroelectronics |
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STM32F429NET7 数据表(HTML) 104 Page - STMicroelectronics |
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104 / 231 page  Electrical characteristics STM32F427xx STM32F429xx 104/231 DocID024030 Rev 6 Figure 25. Typical VBAT current consumption (LSE and RTC ON/backup RAM OFF) 1. The typical current consumption values are given with PDR OFF (internal reset OFF). When the PDR is OFF (internal reset OFF), the typical current consumption is reduced by additional 1.2 µA. 2. Based on characterization, not tested in production unless otherwise specified. 3. Based on characterization, tested in production. Table 29. Typical and maximum current consumptions in VBAT mode Symbol Parameter Conditions(1) Typ Max(2) Unit TA = 25 °C TA = 85 °C TA = 105 °C VBAT = 1.7 V VBAT= 2.4 V VBAT = 3.3 V VBAT = 3.6 V IDD_VBAT Backup domain supply current Backup SRAM ON, low-speed oscillator (LSE) and RTC ON 1.28 1.40 1.62 6 11 µA Backup SRAM OFF, low-speed oscillator (LSE) and RTC ON 0.66 0.76 0.97 3 5 Backup SRAM ON, RTC and LSE OFF 0.70 0.72 0.74 5 10 Backup SRAM OFF, RTC and LSE OFF 0.10 0.10 0.10 2 4 1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values. 2. Guaranteed by characterization results. |
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