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STM32L412R8Y6TR 数据表(PDF) 128 Page - STMicroelectronics |
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STM32L412R8Y6TR 数据表(HTML) 128 Page - STMicroelectronics |
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128 / 192 page ![]() Electrical characteristics STM32L412xx 128/192 DS12469 Rev 4 Prequalification trials Most of the common failures (unexpected reset and program counter corruption) can be reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1 second. To complete these trials, ESD stress can be applied directly on the device, over the range of specification values. When unexpected behavior is detected, the software can be hardened to prevent unrecoverable errors occurring (see application note AN1015). Electromagnetic Interference (EMI) The electromagnetic field emitted by the device are monitored while a simple application is executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with IEC 61967-2 standard which specifies the test board and the pin loading. 6.3.12 Electrical sensitivity characteristics Based on three different tests (ESD, LU) using specific measurement methods, the device is stressed in order to determine its performance in terms of electrical sensitivity. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test conforms to the ANSI/JEDEC standard. Table 65. EMI characteristics Symbol Parameter Conditions Monitored frequency band Max vs. [fHSE/fHCLK] Unit 8 MHz/ 80 MHz SEMI Peak level VDD = 3.6 V, TA = 25 °C, LQFP64 package compliant with IEC 61967-2 0.1 MHz to 30 MHz 3 dBµV 30 MHz to 130 MHz 3 130 MHz to 1 GHz 4 1 GHz to 2 GHz 8 EMI Level 2.5 - Table 66. ESD absolute maximum ratings Symbol Ratings Conditions Package Class Maximum value(1) Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA = +25 °C, conforming to ANSI/ESDA/JEDEC JS-001 All 2 2000 V VESD Electrostatic discharge voltage (charge device model) TA = +25 °C, conforming to ANSI/ESDA/JEDEC-002 BGA64 C2a 500 All others C1 250 1. Guaranteed by characterization results. |
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