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STM32L412R8T6PTR 数据表(PDF) 116 Page - STMicroelectronics |
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STM32L412R8T6PTR 数据表(HTML) 116 Page - STMicroelectronics |
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116 / 192 page ![]() Electrical characteristics STM32L412xx 116/192 DS12469 Rev 4 Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from the ST website www.st.com. Figure 21. Typical application with an 8 MHz crystal 1. REXT value depends on the crystal characteristics. Low-speed external clock generated from a crystal resonator The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal resonator oscillator. All the information given in this paragraph are based on design simulation results obtained with typical external components specified in Table 56. In the application, the resonator and the load capacitors have to be placed as close as possible to the oscillator pins in order to minimize output distortion and startup stabilization time. Refer to the crystal resonator manufacturer for more details on the resonator characteristics (frequency, package, accuracy). Table 56. LSE oscillator characteristics (fLSE = 32.768 kHz)(1) Symbol Parameter Conditions(2) Min Typ Max Unit IDD(LSE) LSE current consumption LSEDRV[1:0] = 00 Low drive capability -250 - nA LSEDRV[1:0] = 01 Medium low drive capability -315 - LSEDRV[1:0] = 10 Medium high drive capability -500 - LSEDRV[1:0] = 11 High drive capability -630 - Gmcritmax Maximum critical crystal gm LSEDRV[1:0] = 00 Low drive capability -- 0.5 µA/V LSEDRV[1:0] = 01 Medium low drive capability - - 0.75 LSEDRV[1:0] = 10 Medium high drive capability -- 1.7 LSEDRV[1:0] = 11 High drive capability -- 2.7 tSU(LSE)(3) Startup time VDD is stabilized - 2 - s |
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