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STM32L412RBI6PTR 数据表(PDF) 133 Page - STMicroelectronics |
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STM32L412RBI6PTR 数据表(HTML) 133 Page - STMicroelectronics |
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133 / 192 page ![]() DS12469 Rev 4 133/192 STM32L412xx Electrical characteristics 163 Unless otherwise specified, the parameters given are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 21: General operating conditions. Table 71. I/O AC characteristics(1)(2) Speed Symbol Parameter Conditions Min Max Unit 00 Fmax Maximum frequency C=50 pF, 2.7 V≤VDDIOx≤3.6 V - 5 MHz C=50 pF, 1.62 V≤VDDIOx≤2.7 V - 1 C=50 pF, 1.08 V≤VDDIOx≤1.62 V - 0.1 C=10 pF, 2.7 V≤VDDIOx≤3.6 V - 10 C=10 pF, 1.62 V≤VDDIOx≤2.7 V - 1.5 C=10 pF, 1.08 V≤VDDIOx≤1.62 V - 0.1 Tr/Tf Output rise and fall time C=50 pF, 2.7 V≤VDDIOx≤3.6 V - 25 ns C=50 pF, 1.62 V≤VDDIOx≤2.7 V - 52 C=50 pF, 1.08 V≤VDDIOx≤1.62 V - 140 C=10 pF, 2.7 V≤VDDIOx≤3.6 V - 17 C=10 pF, 1.62 V≤VDDIOx≤2.7 V - 37 C=10 pF, 1.08 V≤VDDIOx≤1.62 V - 110 01 Fmax Maximum frequency C=50 pF, 2.7 V≤VDDIOx≤3.6 V - 25 MHz C=50 pF, 1.62 V≤VDDIOx≤2.7 V - 10 C=50 pF, 1.08 V≤VDDIOx≤1.62 V - 1 C=10 pF, 2.7 V≤VDDIOx≤3.6 V - 50 C=10 pF, 1.62 V≤VDDIOx≤2.7 V - 15 C=10 pF, 1.08 V≤VDDIOx≤1.62 V - 1 Tr/Tf Output rise and fall time C=50 pF, 2.7 V≤VDDIOx≤3.6 V - 9 ns C=50 pF, 1.62 V≤VDDIOx≤2.7 V - 16 C=50 pF, 1.08 V≤VDDIOx≤1.62 V - 40 C=10 pF, 2.7 V≤VDDIOx≤3.6 V - 4.5 C=10 pF, 1.62 V≤VDDIOx≤2.7 V - 9 C=10 pF, 1.08 V≤VDDIOx≤1.62 V - 21 |
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