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STM32L412RBI3PTR 数据表(PDF) 104 Page - STMicroelectronics

部件名 STM32L412RBI3PTR
功能描述  Ultra-low-power Arm® Cortex®-M4 32-bit MCUFPU, 100DMIPS, up to 128KB Flash, 40KB SRAM, analog, ext. SMPS
PDF  192 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32L412RBI3PTR 数据表(HTML) 104 Page - STMicroelectronics

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IDD_ALL
(Standby
with RTC)
(cont.)
Supply current
in Standby
mode (backup
registers
retained),
RTC enabled
(cont.)
RTC clocked by LSE
bypassed at 32768 Hz
1.8 V
480
640
1500
3450
8100
-
-
-
-
-
nA
2.4 V
615
800
1800
4000
9300
-
-
-
-
-
3 V
775
995
2150
4800
11000
-
-
-
-
-
3.6 V
960
1250
2650
5800
13000
-
-
-
-
-
RTC clocked by LSE
bypassed at 32768 Hz
ENULP = 1
1.8 V
330
510
1600
4000
8800
-
-
-
-
-
2.4 V
435
695
2100
4750
10000
-
-
-
-
-
3 V
565
910
2750
5700
12000
-
-
-
-
-
3.6 V
730
1200
3600
6900
14500
-
-
-
-
-
RTC clocked by LSE
quartz (2) in low drive mode
1.8 V
415
575
1450
3400
-
-
-
-
-
-
2.4 V
485
670
1650
3900
-
-
-
-
-
-
3 V
550
800
1950
4600
-
-
-
-
-
-
3.6 V
690
985
2400
-
-
-
-
-
-
-
RTC clocked by LSE
quartz (2) in low drive mode
ENULP = 1
LPCAL = 1
1.8 V
245
450
1600
4000
-
-
-
-
-
-
2.4 V
290
565
2050
4650
-
-
-
-
-
-
3 V
355
705
2650
5500
-
-
-
-
-
-
3.6 V
450
915
3400
-
-
-
-
-
-
-
IDD_ALL
(SRAM2)(3)
Supply current
to be added in
Standby mode
when SRAM2
is retained
-
1.8 V
100
230
750
1600
3500
-
-
-
-
-
nA
2.4 V
100
230
750
1650
3500
-
-
-
-
-
3 V
100
235
750
1700
3500
-
-
-
-
-
3.6 V
100
240
750
1700
3500
-
-
-
-
-
IDD_ALL
(wakeup
from
Standby)
Supply current
during wakeup
from Standby
mode
Wakeup clock is
MSI = 4 MHz.
See (4).
3 V
1.25
-
-
-
-
-
-
---
mA
1. Guaranteed by characterization results, unless otherwise specified.
2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
3. The supply current in Standby with SRAM2 mode is: IDD_ALL(Standby) + IDD_ALL(SRAM2). The supply current in Standby with RTC with SRAM2 mode is: IDD_ALL(Standby
+ RTC) + IDD_ALL(SRAM2).
4. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 50: Low-power mode wakeup timings.
Table 46. Current consumption in Standby mode (continued)
Symbol
Parameter
Conditions
TYP
MAX(1)
Unit
-VDD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C



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