STM32L412R8I3PTR datasheet(126/192 Pages) STMICROELECTRONICS

部件名	STM32L412R8I3PTR

功能描述	Ultra-low-power Arm® Cortex®-M4 32-bit MCUFPU, 100DMIPS, up to 128KB Flash, 40KB SRAM, analog, ext. SMPS

PDF	192 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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126 / 192 page

Electrical characteristics

STM32L412xx

126/192

DS12469 Rev 4

6.3.10

Flash memory characteristics

Table 62. Flash memory characteristics(1)

1. Guaranteed by design.

Symbol

Parameter

Conditions

Typ

Max

Unit

tprog

64-bit programming time

81.69

90.76

µs

tprog_row

one row (32 double

word) programming time

normal programming

2.61

2.90

fast programming

1.91

2.12

tprog_page

one page (2 Kbyte)

programming time

normal programming

20.91

23.24

fast programming

15.29

16.98

tERASE

Page (2 KB) erase time

22.02

24.47

tprog_bank

one bank (512 Kbyte)

programming time

normal programming

5.35

5.95

fast programming

3.91

4.35

tME

Mass erase time

(one or two banks)

22.13

24.59

IDD

Average consumption

from VDD

Write mode

3.4

Erase mode

3.4

Maximum current (peak)

Write mode

7 (for 2 μs)

Erase mode

7 (for 41 μs)

Table 63. Flash memory endurance and data retention

Symbol

Parameter

Conditions

Min(1)

1. Guaranteed by characterization results.

Unit

NEND

Endurance

TA = –40 to +105 °C

kcycles

tRET

Data retention

1 kcycle(2) at TA = 85 °C

2. Cycling performed over the whole temperature range.

Years

1 kcycle(2) at TA = 105 °C

1 kcycle(2) at TA = 125 °C

10 kcycles(2) at TA = 55 °C

10 kcycles(2) at TA = 85 °C

10 kcycles(2) at TA = 105 °C

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