STM32L412RBY3PTR datasheet(118/192 Pages) STMICROELECTRONICS

部件名	STM32L412RBY3PTR

功能描述	Ultra-low-power Arm® Cortex®-M4 32-bit MCUFPU, 100DMIPS, up to 128KB Flash, 40KB SRAM, analog, ext. SMPS

PDF	192 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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118 / 192 page

Electrical characteristics

STM32L412xx

118/192

DS12469 Rev 4

6.3.8

Internal clock source characteristics

The parameters given in Table 57 are derived from tests performed under ambient

temperature and supply voltage conditions summarized in Table 21: General operating

conditions. The provided curves are characterization results, not tested in production.

High-speed internal (HSI16) RC oscillator

Table 57. HSI16 oscillator characteristics(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI16

HSI16 Frequency

VDD=3.0 V, TA=30 °C

15.88

16.08

MHz

TRIM

HSI16 user trimming step

Trimming code is not a

multiple of 64

0.2

0.3

0.4

Trimming code is a

multiple of 64

-4

-6

-8

DuCy(HSI16)(2) Duty Cycle

∆Temp(HSI16)

HSI16 oscillator frequency

drift over temperature

TA= 0 to 85 °C

-1

TA= -40 to 125 °C

-2

1.5

∆VDD(HSI16)

HSI16 oscillator frequency

drift over VDD

VDD=1.62 V to 3.6 V

-0.1

0.05

tsu(HSI16)(2)

HSI16 oscillator start-up

time

0.8

1.2

μs

tstab(HSI16)(2)

HSI16 oscillator

stabilization time

μs

IDD(HSI16)(2)

HSI16 oscillator power

consumption

155

190

μA

1. Guaranteed by characterization results.

2. Guaranteed by design.

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