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IS25LP256D-RHLA3-TR 数据表(PDF) 167 Page - Integrated Silicon Solution, Inc

部件名 IS25LP256D-RHLA3-TR
功能描述  SERIAL FLASH MEMORY WITH 166/133MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE
PDF  179 Pages
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制造商  ISSI [Integrated Silicon Solution, Inc]
网页  http://www.issi.com
标志 ISSI - Integrated Silicon Solution, Inc

IS25LP256D-RHLA3-TR 数据表(HTML) 167 Page - Integrated Silicon Solution, Inc

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IS25LP256D
IS25WP256D
Integrated Silicon Solution, Inc.- www.issi.com
167
Rev A15
08/05/2024
9.6 AC CHARACTERISTIC
(Under operating range, refer to section 9.4 for AC measurement conditions)
Symbol
Parameter
Min
Typ(2)
Max
Units
fCT
Clock Frequency except for fast read
DTR and read (03h)
Vcc=2.7V~3.6V
0
166(3)
MHz
Vcc=2.3V~3.6V
0
133
MHz
Vcc=1.65V~1.95V
133(5)
MHz
Clock Frequency for fast read DTR:
SPI DTR, Dual DTR, Dual I/O DTR, Quad I/O DTR, and QPI
DTR.
0
80
MHz
fC
Clock Frequency for read (03h)
0
80
MHz
tCLCH(1)
SCK Rise Time (peak to peak)
0.1
V/ns
tCHCL(1)
SCK Fall Time ( peak to peak)
0.1
V/ns
tCKH
SCK High Time
For read (03h)
0.45 x 1/fCmax
ns
For others
0.45 x 1/fCTmax
tCKL
SCK Low Time
For read (03h)
0.45 x 1/fCmax
ns
For others
0.45 x 1/fCTmax
tCEH
CE# High Time
7
ns
tCS
CE# Setup Time
IS25LP
3
ns
IS25WP
5
tCH
CE# Hold Time
3
ns
tDS
Data In Setup Time
STR
2
ns
DTR
1.5
tDH
Data in Hold Time
STR
2
ns
DTR
1.5
tV
Output
Valid
IS25LP
2.7~3.6V,
-40°C to 85°C
@10pF
5.5(4).
ns
@30pF
7.0(4).
2.3~3.6V,
-40°C to 125°C
@10pF
6.5.
@30pF
8.0
IS25WP
1.65~1.95V,
-40°C to 125°C
@10pF
5.5.
@30pF
7.0
tOH
Output Hold Time
2
ns
tDIS(1)
Output Disable Time
8
ns
tHLCH
HOLD Active Setup Time relative to SCK
2
ns
tCHHH
HOLD Active Hold Time relative to SCK
2
ns
tHHCH
HOLD Not Active Setup Time relative to SCK
2
ns
tCHHL
HOLD Not Active Hold Time relative to SCK
2
ns
tLZ(1)
HOLD to Output Low Z
8
ns
tHZ(1)
HOLD to Output High Z
8
ns



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