IS25LE512M-RHLA3:P-TY datasheet(188/189 Pages) ISSI

部件名	IS25LE512M-RHLA3:P-TY

功能描述	SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC

PDF	189 Pages

Scroll/Zoom	100%

制造商	ISSI [Integrated Silicon Solution, Inc]

网页	http://www.issi.com

标志

188 / 189 page

IS25LE512M

IS25WE512M

Integrated Silicon Solution, Inc.- www.issi.com

188

Rev. A6

06/16/2025

11. ORDERING INFORMATION

– Valid Part Numbers

IS25LE 512M

- R H L E :P - TR

PACKING

TR = Tape and Reel

TY = Tray

Blank = Bulk

PBO (Polybenzoxazole) LAYER

:P = Die Overcoat process-PBO layer (Call Factory)

Blank = Without Die Overcoat process-PBO layer

TEMPERATURE RANGE

E = Extended (-40°C to +105°C)

A3 = Automotive Grade (-40°C to +125°C)

PACKAGING CONTENT

L = Green Package (RoHS Compliant, Halogen-free) and

TSCA Compliant

PACKAGE Type (1)

L = 8-contact WSON (8x6mm)

M = 16-pin SOIC 300mil

G = 24-ball TFBGA (6x8mm) 4x6 ball array

H = 24-ball TFBGA (6x8mm) 5x5 ball array

Option

J = Standard

R = Dedicated RESET# in 16-pin SOIC, 24-ball BGA

Q = QE bit set to 1 (Call Factory)

K = Optional 512-byte Page & 256KB Sector (Call Factory)

T = Optional 512-byte Page & 256KB Sector with dedicated

RESET# for SOIC/TFBGA

Die Revision

Blank = First Gen.

Density

512M = 512 Mb

BASE PART NUMBER

IS = Integrated Silicon Solution Inc.

25LE = FLASH, 2.30V ~ 3.60V, QPI & ECC

25WE = FLASH, 1.70V ~ 1.95V, QPI & ECC

Note:

1. Call Factory for other package options available

IS25LE512M-RHLA3:P-TY 数据表(PDF) 188 Page - Integrated Silicon Solution, Inc

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