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RZ/G2M 数据表(PDF) 136 Page - Renesas Technology Corp |
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RZ/G2M 数据表(HTML) 136 Page - Renesas Technology Corp |
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136 / 169 page ![]() RZ/G Series, 2nd Generation Datasheet Section 3. Electrical Characteristics R01DS0483EJ0101 Rev.1.01 Page 136 of 169 Jun 30, 2025 3.28 USB Signal Timing The descriptions in this section are compliant with the following USB 2.0 standards: "Universal Serial Bus Specification Revision 2.0" and "On-The-Go and Embedded Host Supplement to the USB Revision 2.0 Specification". Table 3.28.1 USB High-speed Signal Timing Conditions: VDDQ33 = VDDQ33_USB2* = 3.3 ± 0.2 V, VDDQ18 = 1.8 ± 0.1 V, VDD09_USB2* = 0.82 – 0.07 V / + 0.06 V [RZ/G2H, RZ/G2M V1.3, RZ/G2M V3.0, RZ/G2N], VDDQ33 = VDDQ33_USB2* = 3.3 ± 0.3 V, VDDQ18 = VDDQ18_USB20 = 1.8 ± 0.1 V [RZ/G2E], VSS = 0 V, Tc = −40 to +115 °C [RZ/G2H, RZ/G2M V1.3], Ta = -40 to +85 °C [RZ/G2M V3.0, RZ/G2N, RZ/G2E], Tj = -40 to +115 °C [RZ/G2M V3.0, RZ/G2N, RZ/G2E] Item Symbol Min. Typ. Max. Unit Figures High-speed data rate THSDRAT 479.76 480 480.24 Mb/s — Table 3.28.2 USB Low-/full-speed Signal Timing Conditions: VDDQ33 = VDDQ33_USB2* = 3.3 ± 0.2 V, VDDQ18 = 1.8 ± 0.1 V, VDD09_USB2* = 0.82 - 0.07 V / + 0.06 V [RZ/G2H, RZ/G2M V1.3, RZ/G2M V3.0, RZ/G2N], VDDQ33 = VDDQ33_USB2* = 3.3 ± 0.3 V, VDDQ18 = VDDQ18_USB20 = 1.8 ± 0.1 V [RZ/G2E], VSS = 0 V, Tc = −40 to +115 °C [RZ/G2H, RZ/G2M V1.3], Ta = -40 to +85 °C [RZ/G2M V3.0, RZ/G2N, RZ/G2E], Tj = -40 to +115 °C [RZ/G2M V3.0, RZ/G2N, RZ/G2E], CL = 50 pF Item Symbol Min. Typ. Max. Unit Figures Low-speed* Rise time tR 75 — 300 ns Figure 3.28.1 Fall time tF 75 — 300 ns Differential Rise and Fall Time Matching (tR/tF) tRFM1 80 — 125 % Full-speed Rise time tR 4 — 20 ns Fall time tF 4 — 20 ns Differential Rise and Fall Time Matching (tR/tF) tRFM 90 — 111.11 % Note: * The USB 2.0 Function module does not support Low-speed. Figure 3.28.1 USB Low-/full-speed Signal Timing RZ/G2H RZ/G2M V1.3 RZ/G2N RZ/G2E RZ/G2M V3.0 |
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