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数据搜索系统，热门电子元器件搜索 |
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ST72104G1 数据表(PDF) 113 Page - STMicroelectronics |
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ST72104G1 数据表(HTML) 113 Page - STMicroelectronics |
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113 / 135 page  ST72104G, ST72215G, ST72216G, ST72254G 113/135 EMC CHARACTERISTICS (Cont’d) True Open Drain Pin Protection The centralized protection (4) is not involved in the discharge of the ESD stresses applied to true open drain pads due to the fact that a P-Buffer and diode to VDD are not implemented. An additional local protection between the pad and VSS (5a & 5b) is implemented to completly absorb the posi- tive ESD discharge. Multisupply Configuration When several types of ground (VSS,VSSA, ...) and power supply (VDD,VDDA, ...) are available for any reason (better noise immunity...), the structure shown in Figure 76 is implemented to protect the device against ESD. Figure 74. Positive Stress on a True Open Drain Pad vs. VSS Figure 75. Negative Stress on a True Open Drain Pad vs. VDD Figure 76. Multisupply Configuration IN VDD VSS (1) (2b) (4) OUT VDD VSS (3b) Main path Path to avoid (5a) (5b) IN VDD VSS (1) (2b) (4) OUT VDD VSS (3b) Main path (3b) (3b) VDDA VSSA VDDA VDD VSS BACK TO BACK DIODE BETWEEN GROUNDS VSSA |
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