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H8SX/1663 数据表(PDF) 1138 Page - Renesas Technology Corp |
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H8SX/1663 数据表(HTML) 1138 Page - Renesas Technology Corp |
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1138 / 1158 page ![]() Section 25 Electrical Characteristics Rev.1.00 Jun. 07, 2006 Page 1086 of 1102 REJ09B0294-0100 25.7.2 H8SX/1664 Table 25.13 Flash Memory Characteristics Conditions: V CC = PLLVCC = DrVCC = 3.0 V to 3.6 V, AVCC = 3.0 V to 3.6 V, Vref = 3.0 V to AVCC, V SS = PLLVSS = DrVSS = AVSS = 0 V, Operating temperature range during programming/erasing: T a = 0°C to +75°C (regular specifications), T a = 0°C to +85°C (wide-range specifications) Item Symbol Min. Typ. Max. Unit Test Conditions Programming time* 1, *2, *4 t P 3 30 ms/128 bytes Erasure time* 1, *2, *4 t E 160 800 ms/4-kbyte block 1000 5000 ms/32-kbyte block 2000 10000 ms/64-kbyte block Programming time (total)* 1, *2, *4 Σ tP 10 30 s/512 kbytes T a = 25°C, for all 0s Erasure time (total)* 1, *2, *4 Σ tE 20 60 s/512 kbytes T a = 25°C Programming, Erasure time (total)* 1, *2, *4 Σ tPE 30 90 s/512 kbytes T a = 25°C Overwrite count N WEC 100* 3 times Data save time* 5 T DRP 10 years Notes: 1. Programming time and erase time depend on data in the flash memory. 2. Programming time and erase time do not include time for data transfer. 3. All the characteristics after programming are guaranteed within this value (guaranteed value is from 1 to Min. value). 4. Characteristics when programming is performed within the Min. value |
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