PSMN1R7-30YL datasheet(2/13 Pages) NXP

部件名	PSMN1R7-30YL

功能描述	N-channel TrenchMOS logic level FET

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制造商	NXP [NXP Semiconductors]

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PSMN1R7-30YL_1

Preliminary data sheet

Rev. 01 — 11 September 2008

2 of 13

NXP Semiconductors

PSMN1R7-30YL

N-channel TrenchMOS logic level FET

2.

Pinning information

3.

Ordering information

4.

Limiting values

[1]

Continuous current is limited by package.

Table 2.

Pinning information

Symbol

Description

Simplified outline

Graphic symbol

1S

source

SOT669

(LFPAK)

2S

source

3S

source

4G

gate

mb

D

mounting base; connected to

drain

mb

123 4

S

D

G

mbb076

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PSMN1R7-30YL

LFPAK

Plastic single-ended surface-mounted package (LFPAK); 4 leads

SOT669

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 150 °C

-

30

V

VDGR

drain-gate voltage

Tj ≥ 25 °C; Tj ≤ 150 °C; RGS =20kΩ

-30

V

VGS

gate-source voltage

-20

20

V

ID

drain current

VGS =10V; Tmb = 100 °C; see Figure 1;

[1]

-100

A

VGS =10V; Tmb =25°C; see Figure 1; see Figure

3;

[1]

-100

A

IDM

peak drain current

tp ≤ 10 µs; pulsed; Tmb =25°C; see Figure 3

-790

A

Ptot

total power dissipation

Tmb =25°C; see Figure 2

-109

W

Tstg

storage temperature

-55

150

°C

Tj

junction temperature

-55

150

°C

Source-drain diode

IS

source current

Tmb =25°C;

[1]

-100

A

ISM

peak source current

tp ≤ 10 µs; pulsed; Tmb =25°C

-

790

A

Avalanche ruggedness

EDS(AL)S

non-repetitive

drain-source avalanche

energy

VGS =10V; Tj(init) =25°C; ID =100 A; Vsup ≤ 30 V;

RGS =50 Ω; unclamped

-241

mJ

类似零件编号 - PSMN1R7-30YL

制造商	部件名	数据表	功能描述
NXP Semiconductors	PSMN1R7-30YL	445Kb / 13P	N-channel 30 V 1.7 m廓 logic level MOSFET in LFPAK Rev. 04-20 April 2010
NXP Semiconductors	PSMN1R7-30YL	305Kb / 15P	N-channel 30 V 1.7 m廓 logic level MOSFET in LFPAK Rev. 1-30 May 2011
Nexperia B.V. All right...	PSMN1R7-30YL	913Kb / 15P	N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK Rev. 1 - 30 May 2011
NXP Semiconductors	PSMN1R7-30YL	445Kb / 13P	N-channel 30 V 1.7 m廓 logic level MOSFET in LFPAK Rev. 04-20 April 2010
NXP Semiconductors	PSMN1R7-30YL	305Kb / 15P	N-channel 30 V 1.7 m廓 logic level MOSFET in LFPAK Rev. 1-30 May 2011

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