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PSMN1R7-30YL 数据表(PDF) 8 Page - NXP Semiconductors

部件名 PSMN1R7-30YL
功能描述  N-channel TrenchMOS logic level FET
Download  13 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

PSMN1R7-30YL 数据表(HTML) 8 Page - NXP Semiconductors

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PSMN1R7-30YL_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 11 September 2008
8 of 13
NXP Semiconductors
PSMN1R7-30YL
N-channel TrenchMOS logic level FET
Fig 13. Normalized drain-source on-state
resistance factor as a function of junction
temperature
Fig 14. Gate charge waveform definitions
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
03aa27
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (
°C)
a
003aaa508
VGS
VGS(th)
QGS1
QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
003aac448
0
2
4
6
8
10
0
2040
6080
QG (nC)
VGS
(V)
VDS = 19 (V)
VDS = 12 (V)
003aac454
0
2000
4000
6000
10
-1
1
10
10
2
VDS (V)
C
(pF)
Ciss
Coss
Crss


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