PSMN1R7-30YL datasheet(1/13 Pages) NXP

部件名	PSMN1R7-30YL

功能描述	N-channel TrenchMOS logic level FET

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制造商	NXP [NXP Semiconductors]

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PSMN1R7-30YL

N-channel TrenchMOS logic level FET

Rev. 01 — 11 September 2008

Preliminary data sheet

1.

Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

industrial and communications applications.

1.2 Features and benefits

High efficiency due to low switching

and conduction losses

Suitable for logic level gate drive

sources

1.3 Applications

Class-D amplifiers

DC-to-DC converters

Motor control

Server power supplies

1.4 Quick reference data

[1]

Continuous current is limited by package.

Table 1.

Quick reference

Symbol Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 150 °C

-

30

V

ID

drain current

Tmb =25°C; VGS =10V;

see Figure 1; see Figure 3;

[1]

-

100

A

Ptot

total power

dissipation

Tmb = 25 °C; see Figure 2

-

109

W

Dynamic characteristics

QGD

gate-drain charge

VGS = 4.5 V; ID =10A;

VDS = 12 V; see Figure 14;

see Figure 15

-8.7

-nC

Static characteristics

RDSon

drain-source

on-state resistance

VGS =10V; ID =15 A;

Tj = 25 °C; see Figure 12

-

1.21

1.7

m

Ω

类似零件编号 - PSMN1R7-30YL

制造商	部件名	数据表	功能描述
NXP Semiconductors	PSMN1R7-30YL	445Kb / 13P	N-channel 30 V 1.7 m廓 logic level MOSFET in LFPAK Rev. 04-20 April 2010
NXP Semiconductors	PSMN1R7-30YL	305Kb / 15P	N-channel 30 V 1.7 m廓 logic level MOSFET in LFPAK Rev. 1-30 May 2011
Nexperia B.V. All right...	PSMN1R7-30YL	913Kb / 15P	N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK Rev. 1 - 30 May 2011
NXP Semiconductors	PSMN1R7-30YL	445Kb / 13P	N-channel 30 V 1.7 m廓 logic level MOSFET in LFPAK Rev. 04-20 April 2010
NXP Semiconductors	PSMN1R7-30YL	305Kb / 15P	N-channel 30 V 1.7 m廓 logic level MOSFET in LFPAK Rev. 1-30 May 2011

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