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PSMN2R2-30YLC 数据表(PDF) 2 Page - NXP Semiconductors |
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PSMN2R2-30YLC 数据表(HTML) 2 Page - NXP Semiconductors |
2 / 15 page ![]() PSMN2R2-30YLC All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 3 May 2011 2 of 15 NXP Semiconductors PSMN2R2-30YLC N-channel 30 V 2.15m Ω logic level MOSFET in LFPAK using NextPower [1] Continuous current is limited by package. 2. Pinning information 3. Ordering information 4. Marking [1] % = placeholder for manufacturing site code Dynamic characteristics QGD gate-drain charge VGS =4.5 V; ID =25 A; VDS = 15 V; see Figure 14; see Figure 15 -8 -nC QG(tot) total gate charge VGS =4.5 V; ID =25 A; VDS = 15 V; see Figure 14; see Figure 15 -26 - nC Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source SOT669 (LFPAK; Power-SO8) 2S source 3S source 4 G gate mb D mounting base; connected to drain mb 1234 S D G mbb076 Table 3. Ordering information Type number Package Name Description Version PSMN2R2-30YLC LFPAK; Power-SO8 plastic single-ended surface-mounted package; 4 leads SOT669 Table 4. Marking codes Type number Marking code[1] PSMN2R2-30YLC 2C230L |
类似零件编号 - PSMN2R2-30YLC |
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类似说明 - PSMN2R2-30YLC |
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