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STM32F407IGH6 数据表(PDF) 142 Page - STMicroelectronics

部件名 STM32F407IGH6
功能描述  ARM Cortex-M4 32b MCUFPU, 210DMIPS, up to 1MB Flash/1924KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interfaces & camera
PDF  185 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F407IGH6 数据表(HTML) 142 Page - STMicroelectronics

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Electrical characteristics
STM32F405xx, STM32F407xx
142/185
DocID022152 Rev 4
Synchronous waveforms and timings
Figure 59 through Figure 62 represent synchronous waveforms and Table 80 through
Table 82 provide the corresponding timings. The results shown in these tables are obtained
with the following FSMC configuration:
•
BurstAccessMode = FSMC_BurstAccessMode_Enable;
•
MemoryType = FSMC_MemoryType_CRAM;
•
WriteBurst = FSMC_WriteBurst_Enable;
•
CLKDivision = 1; (0 is not supported, see the STM32F40xxx/41xxx reference manual)
•
DataLatency = 1 for NOR Flash; DataLatency = 0 for PSRAM
In all timing tables, the THCLK is the HCLK clock period (with maximum
FSMC_CLK = 60 MHz).
th(NE_NWE)
FSMC_NWE high to FSMC_NE high hold time
THCLK
-ns
tv(A_NE)
FSMC_NEx low to FSMC_A valid
-
0
ns
tv(NADV_NE)
FSMC_NEx low to FSMC_NADV low
1
2
ns
tw(NADV)
FSMC_NADV low time
THCLK– 2
THCLK+ 1
ns
th(AD_NADV)
FSMC_AD(address) valid hold time after
FSMC_NADV high)
THCLK–2
-
ns
th(A_NWE)
Address hold time after FSMC_NWE high
THCLK
-ns
th(BL_NWE)
FSMC_BL hold time after FSMC_NWE high
THCLK–2
-
ns
tv(BL_NE)
FSMC_NEx low to FSMC_BL valid
-
1.5
ns
tv(Data_NADV) FSMC_NADV high to Data valid
-
THCLK–0.5
ns
th(Data_NWE)
Data hold time after FSMC_NWE high
THCLK
-ns
1. CL = 30 pF.
2. Based on characterization, not tested in production.
Table 78. Asynchronous multiplexed PSRAM/NOR write timings(1)(2)



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