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ST7LITE29F2 数据表(PDF) 131 Page - STMicroelectronics

部件名 ST7LITE29F2
功能描述  8-bit microcontroller with single voltage Flash memory, data EEPROM, ADC, Timers, SPI
PDF  166 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ST7LITE29F2 数据表(HTML) 131 Page - STMicroelectronics

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Electrical characteristics
Doc ID 8349 Rev 5
131/166
13.7
EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
13.7.1
Functional EMS (Electro Magnetic Susceptibility)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electro magnetic events until a failure occurs (indicated by the
LEDs).
ESD: Electro-Static Discharge (positive and negative) is applied on all pins of the
device until a functional disturbance occurs. This test conforms with the IEC 1000-4-2
standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
DD and
VSS through a 100pF capacitor, until a functional disturbance occurs. This test
conforms with the IEC 1000-4-4 standard.
A device reset allows normal operations to be resumed. The test results are given in the
Table 76 based on the EMS levels and classes defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
Corrupted program counter
Unexpected reset
Critical data corruption (control registers...)
Table 75.
EEPROM data memory
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Operating voltage for EEPROM
write/erase
2.4
5.5
V
tprog
Programming time for 1~32 bytes
TA=−40 to +85°C
510
ms
tret
Data retention(1)
TA=+55°C
(2)
20
−−
years
NRW
Write erase cycles
TA=+25°C
300K(3)
−−
cycles
1.
Data based on reliability test results and monitored in production.
2.
The data retention time increases when the
TA decreases.
3.
Design target value pending full product characterization.



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