SQP120N10-09_15 datasheet(2/10 Pages) VISHAY

部件名	SQP120N10-09

功能描述	Automotive N-Channel 100 V (D-S) 175 °C MOSFET

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制造商	VISHAY [Vishay Siliconix]

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SQP120N10-09

www.vishay.com

Vishay Siliconix

S15-1874-Rev. B, 10-Aug-15

2

Document Number: 62663

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width

≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0, ID = 250 μA

100

-

V

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.5

3.0

3.5

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V

VDS = 100 V

-

1

μA

VGS = 0 V

VDS = 100 V, TJ = 125 °C

-

50

VGS = 0 V

VDS = 100 V, TJ = 175 °C

-

150

On-State Drain Current a

ID(on)

VGS = 10 V

VDS

≥ 5 V

120

-

A

Drain-Source On-State Resistance a

RDS(on)

VGS = 10 V

ID = 30 A

-

0.0079

0.0095

Ω

VGS = 10 V

ID = 30 A, TJ = 125 °C

-

0.0190

VGS = 10 V

ID = 30 A, TJ = 175 °C

-

0.0250

Forward Transconductance b

gfs

VDS = 15 V, ID = 30 A

-

99

-

S

Dynamic b

Input Capacitance

Ciss

VGS = 0 V

VDS = 25 V, f = 1 MHz

-

6915

8645

pF

Output Capacitance

Coss

-

635

795

Reverse Transfer Capacitance

Crss

-

280

350

Total Gate Charge c

Qg

VGS = 10 V

VDS = 50 V, ID = 85 A

-

120

180

nC

Gate-Source Charge c

Qgs

-30

-

Gate-Drain Charge c

Qgd

-28.5

-

Gate Resistance

Rg

f = 1 MHz

0.25

0.7

2.3

Ω

Turn-On Delay Time c

td(on)

VDD = 50 V, RL = 0.6

Ω

ID

≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω

-21

32

ns

Rise Time c

tr

-24

36

Turn-Off Delay Time c

td(off)

-52

78

Fall Time c

tf

-16

24

Source-Drain Diode Ratings and Characteristics b

Pulsed Current a

ISM

--

480

A

Forward Voltage

VSD

IF = 85 A, VGS = 0

-

0.9

1.5

V

类似零件编号 - SQP120N10-09_15

制造商	部件名	数据表	功能描述
VBsemi Electronics Co.,...	SQP120N10-3M8	1,011Kb / 8P	N-Channel 100 V (D-S) MOSFET
Vishay Siliconix	SQP120N10-3M8	140Kb / 8P	Automotive N-Channel 100 V (D-S) 175 °C MOSFET Rev. A, 01-Jul-13
Vishay Siliconix	SQP120N10-3M8	141Kb / 9P	Automotive N-Channel 100 V (D-S) 175 °C MOSFET Rev. A, 01-Jul-13

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类似说明 - SQP120N10-09_15

制造商	部件名	数据表	功能描述
Vishay Siliconix	SQM70060EL	223Kb / 10P	Automotive N-Channel 100 V (D-S) 175 °C MOSFET Rev. A, 18-Apr-16
	SQR70090ELR	240Kb / 7P	Automotive N-Channel 100 V (D-S) 175 °C MOSFET Rev. A, 05-Sep-16
	SQ2398ES	260Kb / 11P	Automotive N-Channel 100 V (D-S) 175 °C MOSFET Rev. A, 30-Jul-15
	SQJ456EP	172Kb / 11P	Automotive N-Channel 100 V (D-S) 175 °C MOSFET Rev. F, 28-Nov-11
	SQD50N10-8M9L	165Kb / 10P	Automotive N-Channel 100 V (D-S) 175 °C MOSFET Rev. A, 22-Apr-13
	SQM70060EL	205Kb / 9P	Automotive N-Channel 100 V (D-S) 175 °C MOSFET 01-Jan-2023
	SQJA68EP	262Kb / 10P	Automotive N-Channel 100 V (D-S) 175 °C MOSFET 01-Jan-2023
	SQA700CEJW	177Kb / 6P	Automotive N-Channel 100 V (D-S) 175 °C MOSFET 01-Jan-2023
	SQJ476EP	303Kb / 10P	Automotive N-Channel 100 V (D-S) 175 °C MOSFET 01-Jan-2023
	SQD50N10-8M9L	165Kb / 9P	Automotive N-Channel 100 V (D-S) 175 °C MOSFET 01-Jan-2023

More results

SQP120N10-09 数据表(PDF) 2 Page - Vishay Siliconix

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SQP120N10-09 数据表(PDF) 2 Page - Vishay Siliconix

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类似零件编号 - SQP120N10-09_15

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