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STM32F446ME 数据表(PDF) 106 Page - STMicroelectronics |
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STM32F446ME 数据表(HTML) 106 Page - STMicroelectronics |
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106 / 201 page ![]() Electrical characteristics STM32F446xC/E 106/201 DocID027107 Rev 5 possible to the oscillator pins in order to minimize output distortion and startup stabilization time. Refer to the crystal resonator manufacturer for more details on the resonator characteristics (frequency, package, accuracy). Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from the ST website www.st.com. Figure 26. Typical application with a 32.768 kHz crystal 6.3.10 Internal clock source characteristics The parameters given in Table 41 and Table 42 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 16. High-speed internal (HSI) RC oscillator Table 40. LSE oscillator characteristics (fLSE = 32.768 kHz) (1) 1. Guaranteed by design. Symbol Parameter Conditions Min Typ Max Unit RF Feedback resistor - - 18.4 - M Ω IDD LSE current consumption - - - 1 µA ACCLSE(2) 2. This parameter depends on the crystal used in the application. Refer to application note AN2867. LSE accuracy - -500 - 500 ppm Gm_crit_max Maximum critical crystal gm Startup low-power mode - - 0.56 µA/V Startup high-drive mode - - 1.5 tSU(LSE)(3) 3. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is reached. This value is guaranteed based on test during characterization. It is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer. startup time VDD is stabilized - 2 - s Table 41. HSI oscillator characteristics (1) Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz |
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