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STM32F446RC 数据表(PDF) 107 Page - STMicroelectronics |
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STM32F446RC 数据表(HTML) 107 Page - STMicroelectronics |
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107 / 201 page  DocID027107 Rev 5 107/201 STM32F446xC/E Electrical characteristics 174 Figure 27. LACCHSI versus temperature 1. Guaranteed based on test during characterization. Low-speed internal (LSI) RC oscillator ACCHSI Accuracy of the HSI oscillator User-trimmed with the RCC_CR register(2) -- 1 % Factory- calibrated TA = –40 to 105 °C(3) –8 - 4.5 % TA = –10 to 85 °C(3) –4 - 4 % TA = 25 °C –1 - 1 % tsu(HSI)(2) HSI oscillator startup time -- 2.2 4 µs IDD(HSI)(2) HSI oscillator power consumption - - 60 80 µA 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. 2. Guaranteed by design. 3. Guaranteed based on test during characterization. Table 42. LSI oscillator characteristics (1) 1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Min Typ Max Unit fLSI(2) 2. Guaranteed based on test during characterization.. Frequency 17 32 47 kHz tsu(LSI)(3) 3. Guaranteed by design. LSI oscillator startup time - 15 40 µs IDD(LSI)(3) LSI oscillator power consumption - 0.4 0.6 µA Table 41. HSI oscillator characteristics (1) Symbol Parameter Conditions Min Typ Max Unit |
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