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ST7MC2S4TC 数据表(PDF) 259 Page - STMicroelectronics |
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ST7MC2S4TC 数据表(HTML) 259 Page - STMicroelectronics |
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259 / 308 page ![]() ST7MC1/ST7MC2 259/308 12.6 MEMORY CHARACTERISTICS 12.6.1 RAM and Hardware Registers 12.6.2 FLASH Memory Notes: 1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg- isters (only in HALT mode). Not tested in production. 2. Data based on characterization results, not tested in production. 3. VPP must be applied only during the programming or erasing operation and not permanently for reliability reasons. 4. Data based on simulation results, not tested in production 5. In Write/Erase mode the IDD supply current consumption is the same as in Run mode (section 12.4.1 on page 251) Symbol Parameter Conditions Min Typ Max Unit VRM Data retention mode 1) HALT mode (or RESET) 1.6 V DUAL VOLTAGE HDFLASH MEMORY Symbol Parameter Conditions Min 2) Typ Max 2) Unit fCPU Operating frequency Read mode 0 8 MHz Write / Erase mode 1 8 VPP Programming voltage 3) 4.5V ≤ V DD ≤ 5.5V 11.4 12.6 V IPP VPP current 4) 5) Read (VPP=12V) 200 µA Write / Erase 30 mA tVPP Internal VPP stabilization time 10 µs tRET Data retention TA=85°C 40 years TA=105°C 25 TA=125°C 10 NRW Write erase cycles TA=25°C 100 cycles TPROG TERASE Programming or erasing tempera- ture range -40 25 85 °C |
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