STM8AF52AA datasheet(116/125 Pages) STMICROELECTRONICS

116 / 125 page

Revision history

STM8AF526x/8x/Ax STM8AF6269/8x/Ax

116/125

DocID14395 Rev 15

22-Aug-2008

(continued)

Table 18: Typ. IDD(WFI)HSI vs. VDD @ fCPU = 16 MHz, peripherals

= off: Replaced the source blocks ‘simple USART’, ‘very low-end

timer (timer 4)’, and ‘EEPROM’ with ‘LINUART’, ‘timer4’ and

‘reserved’ respectively, added TMU registers.

Table 20: HSE oscillator circuit diagram: Updated OPT6 and NOPT6,

added OPT7 to 17 (TMU, BL)

Table 21: Typical HSI frequency vs VDD: Updated OPT1 UBC[7:0],

OPT4 CKAWUSEL, OPT4 PRSC [1:0], and OPT6, added OPT7 to

16 (TMU).

Table 23: Operating lifetime: Amended footnotes.

Table 26: Total current consumption in Run, Wait and Slow mode.

General conditions for VDD apply, TA = -40 °C to 150 °C: Added

parameter ‘voltage and current operating conditions’.

Table 27: Total current consumption in Halt and Active-halt modes.

General conditions for VDD applied. TA = -40 °C to 55 °C unless

otherwise stated: Amended footnotes.

Table 28: Oscillator current consumption: Replaced.

Table 29: Programming current consumption: Amended maximum

data and footnotes.

Table 21: Current characteristics: Replaced.

Table 22: Thermal characteristics: Added and amended IDD(RUN)

data; amended IDD(WFI) data; amended footnotes.

Table 32: HSE oscillator characteristics: Filled in, amended

maximum data and footnotes.

Figure 13 to Figure 18: info on peripheral activity added.

Table 33: HSI oscillator characteristics: Modified fHSE_ext data and

added VHSEdhl data.

Table 35: Flash program memory/data EEPROM memory: Removed

ACCHSI parameters and replaced with ACCHS parameters; amended

data and footnotes.

Amended data of ‘RAM and hardware registers’ table.

Table 37: Data memory: Updated names and data of NRW and tRET

parameters.

Table 40: TIM 1, 2, 3, and 4 electrical specifications: Added VOH and

VOL parameters; Updated Ilkg ana parameter.

Removed: Output driving current (standard ports), Output driving

current (true open drain ports), and Output driving current (high sink

ports).

Table 46: EMI data: Updated fADC, tS, and tCONV data.

Table: ADC accuracy for VDDA = 3.3 V: removed the 4-MHz

condition from all parameters.

Table 47: ESD absolute maximum ratings: Removed the 4-MHz

condition from all parameters; updated footnote 1 and removed

footnote 2.

Table 51: LQFP48 - 48-pin, 7 x 7 mm low-profile quad flat package

mechanical data: Added data for TA = 145 °C.

Figure 53: Updated memory size, pin count and package type

information.

Table 55. Document revision history (continued)

Date

Revision

Changes

STM8AF52AA 数据表(PDF) 116 Page - STMicroelectronics

STM8AF52AA 数据表(HTML) 116 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

数据表下载