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R5F100JF 数据表(PDF) 122 Page - Renesas Technology Corp |
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R5F100JF 数据表(HTML) 122 Page - Renesas Technology Corp |
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122 / 202 page ![]() RL78/G13 2. ELECTRICAL SPECIFICATIONS (TA = -40 to +85 C) Page 122 of 196 R01DS0131EJ0330 Rev.3.30 Mar 31, 2016 2.8 Flash Memory Programming Characteristics (TA = 40 to +85C, 1.8 V VDD 5.5 V, VSS = 0 V) Parameter Symbol Conditions MIN. TYP. MAX. Unit CPU/peripheral hardware clock frequency fCLK 1.8 V VDD 5.5 V 1 32 MHz Number of code flash rewrites Notes 1, 2, 3 Retained for 20 years TA = 85 C 1,000 Retained for 1 years TA = 25 C 1,000,000 Retained for 5 years TA = 85 C 100,000 Number of data flash rewrites Notes 1, 2, 3 Cerwr Retained for 20 years TA = 85 C 10,000 Times Notes 1. 1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the rewrite. 2. When using flash memory programmer and Renesas Electronics self programming library 3. These are the characteristics of the flash memory and the results obtained from reliability testing by Renesas Electronics Corporation. 2.9 Dedicated Flash Memory Programmer Communication (UART) (TA = 40 to +85C, 1.8 V EVDD0 = EVDD1 VDD 5.5 V, VSS = EVSS0 = EVSS1 = 0 V) Parameter Symbol Conditions MIN. TYP. MAX. Unit Transfer rate During serial programming 115,200 1,000,000 bps |
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